[1] J. Kahn . “Nanotechnology”. National Geographic. (2006) 98-119.
[2] N. Mustapha and A. Alyamani. “Effects of high dose gamma irradiation on ITO thin film properties”. Thin Solid Films. 611 (2016) 27-32.
[3] H. Hartnagel. “Semiconducting Transparent Thin Films”. Taylor & Francis. (1995).
[4] Y.S. Choi, J.U. Yun and S.E. Park. “Flat panel display glass: Current status and future”. NonCrystalline Solids. 431 (2016) 2-7.
[5] S.V.N. Pammi, NJ. Seong and SG. Yoon. “Indium Tin Oxide Thin films Crystallized at a low temperature using a Nanocluster deposition Technique”. Scripta Materialia. 61 (2009) 867-870.
[6] M. Johnson and Q. Zhang. “Titanium carbide MXene: synthesis, electrical and optical properties and their applications in sensors and energy storage devices”. Nanomaterials and Nanotechnology. 9 (2019) 1–9.
[7] K. Wang, H. Wu, Y. Meng, Y. Zhang and Z. Wei. “Integrated energy storage and electrochromic function in one flexible device: an energy storage smart window”. Energy & Environmental Science Journal. 8 (2012) 8384-8389.
[8] R.E. Halsted, M.R. Lorenz, B. Segall, J. “Band edge emission properties of CdTe”
Phys. Chem. Solids 22 (1961) 109
[9] S.S. Hegedus, B.E. McCandless, Sol. “CdTe contacts for CdTe/CdS solar cells: Effect of Cu thickness, surface preparation and recontacting on device performance and stability”
Energy. Mater. & Sol. Cells 88 (2005) 75
[10] D. Grecu, A.D. Compaan. “Photoluminescence study of Cu diffusion and electromigration in CdTe”Appl. Phys. Lett. 75 (1999) 361
[11] D.T. Nguyen, S. Vedraine, L. Cattin, P. Torchio, M. Morsli, F. Flory and J.C. Bernède. “Effect of the thickness of the MoO3 layers on optical properties of MoO3/Ag/MoO3 multilayer structures”. Journal Of Applied Physics. 112 (2012).
[12] V. Sittinger, M. Hofer, T. Harig, M. Justianto, H. Thiem, M. Vergohl and L. Schafer. “Optical grade SiO2 films prepared by HWCVD”. Surface and Coating Technology. 336 (2018) 61– 66.
[13] M. Johnson, Q. Zhang and D. Wang. “Titanium carbide MXene: synthesis, electrical and optical properties and their applications in sensors and energy storage devices”. Nanomaterials and Nanotechnology. 9 (2019) 1-9.
[14] M. Rafiee, S. Chandra, H. Ahmed and S.J. McCormack. “An overview of various configurations of Luminescent Solar Concentrators for photovoltaic applications”.Optical Materials. 91 (2019) 212–227.
[15] M.O. Diniz, D.T. Cestarolli, R.F. Bianchi and E.M.Guerra.“Electrical Characterization of V2O5/POMA Deposited by the Casting Technique”. Composites Biodegradable Polymers. 8 (2020) 1-6.
[16] M. M. Alam, A.M. Asiri and M. Mrahman. “Fabrication of phenylhydrazine sensor with V2O5 doped ZnO nanocomposites”. Materials Chemistry and Physics. 243 (2020) 122658.
[17] M.O. Diniz, A.F. Golin, M.C. Santos, R.F. Bianchi and E.M. Guerra. “Improving performance of polymer-based ammonia gas sensor using POMA/ V2O5 hybrid films”. Organic Electronics. 67 (2019) 215-221.
[18] M.C. Santos, O.H.C. Hamdan, S.A. Valverde, E.M. Guerra and R.F. Bianchi. “Synthesis and characterization of V2O5/PANI thin films for application in amperometric ammonia gas sensors”. Organic Electronics. 65 (2019) 116-120.
[19] C.O. Mosiori. “Inorganic Ternary Thin films -Anaysis of Optical Properties”. Anchor Academic Publishing. (2015) 210.
[20] S.Y. Wang, W. Wang and Z.H. Lu. “Asynchronouspulse ultrasonic spray pyrolysis deposition of CuxS (x=1-2) thin films”, Materials Science and Engineering. 103(2) (2003) 184-188.
[21] N. Popa. “The (hkl) dependence of diffraction-line broadening caused by strain and size for all Laue groups in Rietveld refinement”. Journal of Applied Crystallography. 31(2) (1998) 176-80.
[22] K. M. Shafeeq, V. P. Athira, R. Kishor and P. M. Aneesh. “Structural and optical properties of V2O5 nanostructures grown by thermal decomposition”. Applied physics A. 126 (2020) 586.
[23] M. Shukur, K. Kumar and G. Narsinga. “ Influence of annealing temperature on crystallite size and optical band gap of LaMnO3 nanocrystallites”. Mechanical Engineering. 7 (2022).
[24] M. Ghasemi Varnamkhasti, E. Shahriari. “Influence of heat treatment on characteristics of In2O3/Ag/MoO3 multilayer films as transparent anode for optoelectronic applications”. Appl. Phys. B, 120 (2015) 517-525.
[25]
H. Zhang,
Y. Wang,
L. Gao and
K. Wang . “Electrochemical and enhanced photoelectrochemical properties of a hybrid film composed of anionic sandwich-type heteropolyoxotungstate and cationic hemicyanine”. Applied Electrochemistry. 46 (2016) 505-514.
[26] A. Soltanian, M. Ghasemi Varnamkhasti, L. Eftekhari and V. Soleimanian. “Correlation between the optical and microstructural characteristics and surface wettability transition of In2O3:Sn/ZnO nanostructured bilayer system for self-cleaning”. Physica Scripta. 98 (2023) 7.
[27] P. k. Singh, S. K. Tripathi, D. K. Dwivedi. “ Effect of thermal annealing on structural and optical properties of In doped Ge-Se-Te chalcogenide thin films”. 37 (2019) 554-562.
[28] O. Amin, J. Kadhim, A. Ameen and T. Abdulwahid. “Structural and optical properties of thermally annealed TiO2–SiO2 binary thin films synthesized by sol–gel method”. Materials Science: Materials in Electronics. 29 (2018) 16010-16020.
[29] H. Frey and H.R. Khan. “Handbook of Thin-Film Technology”. Heidelberg: Springer. (2015).
[30]Y. Liu, Q.Xuan Li,
L.Yu Wan, B. Kucukgok, E. Ghafari , T. Ferguson, X. Zhang, S. Wang , Z. Chuan Feng and N. Lu. “ Composition and temperature dependent optical properties of AlxGa1-xN alloy by spectroscopic ellipsometry”.
Applied Surface Science. 421 (2017) 389-396.
[31] L. Liu, Sh. Ma, H. Wu, Bo. Zhu. “ Effect of the annealing process on electrical and optical properties of SnO2 /Ag / SnO2 nanometric multilayer film”.
Materials Letters. 149. 2015. 43-46.
[32] Y. Kayanuma. “ Quantum-size effects of interacting electrons and holes in semiconductor microcrystals with spherical shape” Physical Review B. 38 (1988) 9797–9805.
[33]
V. Soleimanian , M. Saeedi, A. Mokhtar.“ The influence of heat treatment on the crystallite size, dislocation density, stacking faults probability and optical band gap of nanostructured cadmium sulfide films”.
Materials Science in Semiconductor Processing. 30 (2015) 118–127.
